inchange semiconductor isc product specification isc silicon npn power transistor 2SD2551 description high breakdown voltage- v cbo = 1700v (min) high switching speed low saturation voltage built-in damper diode applications designed for color tv horizont al deflection applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1700 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current- continuous 5 a i cm collector current- pulse 10 a i b b base current- continuous 2.5 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2551 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 300ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 0.8a b 5.0 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 0.8a b 1.5 v i cbo collector cutoff current v cb = 1700v; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 66 200 ma h fe-1 dc current gain i c = 1a; v ce = 5v 8 28 h fe-2 dc current gain i c = 4a; v ce = 5v 5 10 v ecf c-e diode forward voltage i f = 5a 2.0 v f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 3 mhz c ob output capacitance i e = 0; v cb = 10v; f test =1.0mhz 125 pf switching times t s storage time 10 s t f fall time i cp = 4a, i b1( end ) = 0.8a, f h = 15.75khz 1.0 s isc website www.iscsemi.cn 2
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